High Speed Devices and Circuits

Course Description

1. Important parameters governing the high speed performance of devices and circuits:-
Transit time of charge carriers, junction capacitances, ON-resistances and their dependence on the device geometry and size, carrier mobility, doping concentration and temperature. Contact resistance and interconnection/interlayer capacitances in the Integrated Electronics Circuits. (4 hours)

2. Silicon based MOSFET and BJT circuits for high speed operation and their limitations:-
Emitter coupled Logic (ECL) and CMOS Logic circuits with scaled down devices. Silicon On Insulator (SOI) wafer preparation methods and SOI based devices and SOICMOS circuits for high speed low power applications. (8 hours)

3. Materials for high speed devices and circuits:-
Merits of III –V binary and ternary compound semiconductors (GaAs, InP, InGaAs, AlGaAs ETC.), silicon-germanium alloys and silicon carbide for high speed devices, as compared to silicon based devices. Brief outline of the crystal structure, dopants and electrical properties such as carrier mobility, velocity versus electric field characteristics of these materials. Material and device process technique with these III-V and IV – IV semiconductors.
(8 hours)

4. Metal semiconductor contacts and Metal Insulator Semiconductor and MOS devices:
Native oxides of Compound semiconductors for MOS devices and the interface state density related issues. Metal semiconductor contacts, Schottky barrier diode. Thermionic Emission model for current transport and current-voltage (I-V) characteristics. Effect of interface states and interfacial thin electric layer on the Schottky barrier height and the I-V characteristics. (6 hours)

5. Metal semiconductor Field Effect Transistors (MESFETs):
Pinch off voltage and threshold voltage of MESFETs. D.C. characteristics and analysis of drain current. Velocity overshoot effects and the related advantages of GaAs, InP and GaN based devices for high speed operation. Sub threshold characteristics, short channel effects and the performance of scaled down devices. (6 hours)

6. High Electron Mobility Transistors (HEMT):
Hetero-junction devices. The generic Modulation Doped FET(MODFET) structure for high electron mobility realization. Principle of operation and the unique features of HEMT. InGaAs/InP HEMT structures. ( 6 hours)

7. Hetero junction Bipolar transistors (HBTs):
Principle of operation and the benefits of hetero junction BJT for high speed applications. GaAs and InP based HBT device structure and the surface passivation for stable high gain high frequency performance. SiGe HBTs and the concept of strained layer devices. (6 hours)

8. High speed Circuits:
GaAs Digital Integrated Circuits for high speed operation- Direct Coupled Field Effect Transistor Logic (DCFL), Schottky Diode FET Logic (SDFL), Buffered FET Logic(BFL). GaAs FET Amplifiers. Monolithic Microwave Integrated Circuits (MMICs) (4 hours) 9. High Frequency resonant – tunneling devices. Resonant-tunneling hot electron transistors and circuits. (2 hours)

High Speed Devices and Circuits
Screenshot from Lecture 7: Dopants and impurities in GaAs and InP
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Video Lectures & Study Materials

Visit the official course website for more study materials: http://nptel.ac.in/syllabus/117106089/

# Lecture Play Lecture
1 Introduction to Basic Concepts Play Video
2 Requirements of High Speed Devices, Circuits & Materials Play Video
3 Classifications & Properties of Compound Semiconductors Play Video
4 Temary Compound Semiconductor and their Applications I Play Video
5 Temary Compound Semiconductor and their Applications II Play Video
6 Crystal Structures in Gallium Arsenide (GaAs) Play Video
7 Dopants and impurities in GaAs and InP Play Video
8 Brief Overview of GaAs Technology for High Speed Devices Play Video
9 Epitaxial Techniques for GaAs High Speed Devices Play Video
10 MBE and LPE for GaAs Epitaxy Play Video
11 GaAs and InP Devices for Microelectronics Play Video
12 Metal Semiconductor Contacts for MESFET I Play Video
13 Metal Semiconductor contacts for MESFET II Play Video
14 Metal Semiconductor contacts for MESFET III Play Video
15 Ohmic Contacts on Semiconductors Play Video
16 Fermi Level Pinning & Schottky Barrier Diodes Play Video
17 Schottky Barrier Diode Play Video
18 Schottky Barrier Diodes Play Video
19 Causes of Non-Idealities-Schottky Barrier Diodes Play Video
20 MESFET: Operation & I-V Characteristics Play Video
21 MESFET: I-V Characteristics Shockley's Model Play Video
22 MESFET: Shockley's Model and Velocity Saturation Play Video
23 MESFET: Velocity Saturation Effect on Drain Current Saturation Play Video
24 MESFET: Drain Current Saturation IDS due to Velocity Saturation Play Video
25 MESFET: Effects of Channel Length and Gate Length on IDS and gm Play Video
26 MESFET: Effects of Velocity Saturation and Velocity Field Characteristics Play Video
27 MESFET: Velocity Field Characteristics - Overshoot Effects Play Video
28 Velocity Overshoot Effect and Self-aligned MESFET SAINT Play Video
29 Self-aligned MESFET-SAINT: Threshold Voltage and Sub Threshold Current Play Video
30 Hetero Junctions Play Video
31 Hetero Junctions & High-Electron Mobility Transistor (HEMT) I Play Video
32 Hetero Junctions & High-Electron Mobility Transistor (HEMT) II Play Video
33 High Electron Mobility Transistor Play Video
34 HEMT-off Voltage Play Video
35 HEMT 1-V Characteristics and Transconductance Play Video
36 Indium Phosphide Based HEMT Play Video
37 Pseudomorphic HEMT Play Video
38 Hetrojunction Bipolar Transistors (HBT) I Play Video
39 Hetrojunction Bipolar Transistors(HBT) II Play Video
40 Hetrojunction Bipolar Transistors(HBT) III Play Video
41 Hetrojunction Bipolar Transistors(HBT) IV Play Video


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