Metal Semiconductor Contacts for MESFET I 
Metal Semiconductor Contacts for MESFET I
by IIT Madras
Video Lecture 12 of 41
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Date Added: April 3, 2016

Lecture Description

This video lecture, part of the series High Speed Devices and Circuits by Prof. , does not currently have a detailed description and video lecture title. If you have watched this lecture and know what it is about, particularly what Electrical Engineering topics are discussed, please help us by commenting on this video with your suggested description and title. Many thanks from,

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Course Index

  1. Introduction to Basic Concepts
  2. Requirements of High Speed Devices, Circuits & Materials
  3. Classifications & Properties of Compound Semiconductors
  4. Temary Compound Semiconductor and their Applications I
  5. Temary Compound Semiconductor and their Applications II
  6. Crystal Structures in Gallium Arsenide (GaAs)
  7. Dopants and impurities in GaAs and InP
  8. Brief Overview of GaAs Technology for High Speed Devices
  9. Epitaxial Techniques for GaAs High Speed Devices
  10. MBE and LPE for GaAs Epitaxy
  11. GaAs and InP Devices for Microelectronics
  12. Metal Semiconductor Contacts for MESFET I
  13. Metal Semiconductor contacts for MESFET II
  14. Metal Semiconductor contacts for MESFET III
  15. Ohmic Contacts on Semiconductors
  16. Fermi Level Pinning & Schottky Barrier Diodes
  17. Schottky Barrier Diode
  18. Schottky Barrier Diodes
  19. Causes of Non-Idealities-Schottky Barrier Diodes
  20. MESFET: Operation & I-V Characteristics
  21. MESFET: I-V Characteristics Shockley's Model
  22. MESFET: Shockley's Model and Velocity Saturation
  23. MESFET: Velocity Saturation Effect on Drain Current Saturation
  24. MESFET: Drain Current Saturation IDS due to Velocity Saturation
  25. MESFET: Effects of Channel Length and Gate Length on IDS and gm
  26. MESFET: Effects of Velocity Saturation and Velocity Field Characteristics
  27. MESFET: Velocity Field Characteristics - Overshoot Effects
  28. Velocity Overshoot Effect and Self-aligned MESFET SAINT
  29. Self-aligned MESFET-SAINT: Threshold Voltage and Sub Threshold Current
  30. Hetero Junctions
  31. Hetero Junctions & High-Electron Mobility Transistor (HEMT) I
  32. Hetero Junctions & High-Electron Mobility Transistor (HEMT) II
  33. High Electron Mobility Transistor
  34. HEMT-off Voltage
  35. HEMT 1-V Characteristics and Transconductance
  36. Indium Phosphide Based HEMT
  37. Pseudomorphic HEMT
  38. Hetrojunction Bipolar Transistors (HBT) I
  39. Hetrojunction Bipolar Transistors(HBT) II
  40. Hetrojunction Bipolar Transistors(HBT) III
  41. Hetrojunction Bipolar Transistors(HBT) IV

Course Description

1. Important parameters governing the high speed performance of devices and circuits:-
Transit time of charge carriers, junction capacitances, ON-resistances and their dependence on the device geometry and size, carrier mobility, doping concentration and temperature. Contact resistance and interconnection/interlayer capacitances in the Integrated Electronics Circuits. (4 hours)

2. Silicon based MOSFET and BJT circuits for high speed operation and their limitations:-
Emitter coupled Logic (ECL) and CMOS Logic circuits with scaled down devices. Silicon On Insulator (SOI) wafer preparation methods and SOI based devices and SOICMOS circuits for high speed low power applications. (8 hours)

3. Materials for high speed devices and circuits:-
Merits of III –V binary and ternary compound semiconductors (GaAs, InP, InGaAs, AlGaAs ETC.), silicon-germanium alloys and silicon carbide for high speed devices, as compared to silicon based devices. Brief outline of the crystal structure, dopants and electrical properties such as carrier mobility, velocity versus electric field characteristics of these materials. Material and device process technique with these III-V and IV – IV semiconductors.
(8 hours)

4. Metal semiconductor contacts and Metal Insulator Semiconductor and MOS devices:
Native oxides of Compound semiconductors for MOS devices and the interface state density related issues. Metal semiconductor contacts, Schottky barrier diode. Thermionic Emission model for current transport and current-voltage (I-V) characteristics. Effect of interface states and interfacial thin electric layer on the Schottky barrier height and the I-V characteristics. (6 hours)

5. Metal semiconductor Field Effect Transistors (MESFETs):
Pinch off voltage and threshold voltage of MESFETs. D.C. characteristics and analysis of drain current. Velocity overshoot effects and the related advantages of GaAs, InP and GaN based devices for high speed operation. Sub threshold characteristics, short channel effects and the performance of scaled down devices. (6 hours)

6. High Electron Mobility Transistors (HEMT):
Hetero-junction devices. The generic Modulation Doped FET(MODFET) structure for high electron mobility realization. Principle of operation and the unique features of HEMT. InGaAs/InP HEMT structures. ( 6 hours)

7. Hetero junction Bipolar transistors (HBTs):
Principle of operation and the benefits of hetero junction BJT for high speed applications. GaAs and InP based HBT device structure and the surface passivation for stable high gain high frequency performance. SiGe HBTs and the concept of strained layer devices. (6 hours)

8. High speed Circuits:
GaAs Digital Integrated Circuits for high speed operation- Direct Coupled Field Effect Transistor Logic (DCFL), Schottky Diode FET Logic (SDFL), Buffered FET Logic(BFL). GaAs FET Amplifiers. Monolithic Microwave Integrated Circuits (MMICs) (4 hours) 9. High Frequency resonant – tunneling devices. Resonant-tunneling hot electron transistors and circuits. (2 hours)


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